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内容简介
《集成电路中的现代半导体器件（英文版）》主要介绍与集成电路相关的主流半导体器件的基本原理，包括PN结二极管、MOSFET器件和双极型晶体管（BJT），同时介绍了与这些半导体器件相关的集成工艺制造技术。《集成电路中的现代半导体器件（英文版）》作者是美国工程院院士、中国科学院外籍院士，多年从事半导体器件与集成电路领域的前沿性研究工作。《集成电路中的现代半导体器件（英文版）》内容简明扼要，重点突出，深度掌握适宜，讲解深入浅出，理论联系实际。《集成电路中的现代半导体器件（英文版）》可作为微电子及相关专业本科生教材，也可以作为微电子及相关领域工程技术人员的参考书。
作者简介
胡正明（Chenming Calvin Hu），IEEE Fellow、美国工程院院士、中国科学院外籍院士，多年从事半导体器件与集成电路领域的前沿性研究工作.对半导体器件的开发及未来的微型化做出了重大贡献。2009年因在器件物理和尺寸方面的杰出贡献而获得西泽润一奖（Jun-ichi Nishizawa Medal），发表论文800余篇，拥有美国专利100余项，由他指导发表的博士论文60余篇。
章节目录
Preface
1Electrons and Holes in Semiconductors
1．1Silicon Crystal Structure
1．2Bond Model of Electrons and Holes
1．3Energy Band Model
1．4Semiconductors， Insulators， and Conductors
1．5Electrons and Holes
1．6Density of States
1．7Thermal Equilibrium and the Fermi Function
1．8Electron and Hole Concentrations
1．9General Theory ofnandp
1．10 Carrier Concentrations at Extremely High and Low Temperatures
1．11 Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
2Motion and Recombination of Electrons and Holes
2．1Thermal Motion
2．2Drift
2．3Diffusion Current
2．4Relation Between the Energy Diagram and V，%
2．5Einstein Relationship Between D and u
2．6Electron-Hole Recombination
2．7Thermal Generation
2．8Quasi-Equilibrium and Quasi-Fermi Levels
2．9Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
3Device Fabrication Technology
3．1Introduction to Device Fabrication
3．2Oxidation of Silicon
3．3Lithography
3．4Pattern Transfer-Etching
3．5Doping
3．6Dopant Diffusion
3．7Thin-Film Deposition
3．8Interconnect-The Back-End Process
3．9Testing， Assembly， and Qualification
3．10Chapter Summary-A Device Fabrication Example
PROBLEMS
REFERENCES
GENERAL REFERENCES
4PN and Metal-Semiconductor Junctions
Part 1PN Junction
4．1Building Blocks of the PN Junction Theory
4．2 Depletion-Layer Model
4．3Reverse-Biased PN Junction
4．4Capacitance-Voltage Characteristics
4．5Junction Breakdown
4．6Carrier Injection Under Forward Bias——Quasi-Equilibrium Boundary Condition
4．7Current Continuity Equation
4．8Excess Carriers in Forward-Biased PN Junction
4．9PN Diode IV Characteristics
4．10Charge Storage
4．11Small-Signal Model of the Diode
Part 2Application to Optoelectronic Devices
4．12Solar Cells
4．13Light-Emitting Diodes and Solid-State Lighting
4．14Diode Lasers
4．15Photodiodes
Part Ⅲ： Metal-Semiconductor Junction
4．16Schottky Barriers
4．17Thermionic Emission Theory
4．18Schottky Diodes
4．19Applications of Schottky Diodes
4．20Quantum Mechanical Tunneling
4．21Ohmic Contacts
4．22Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
5MOS Capa
5．1 Flat-Band Condition and Flat-Band Voltage
5．2 Surface Accumulation
5．3 Surface Depletion
5．4 Threshold Condition and Threshold Voltage
5．5 Strong Inversion Beyond Threshold
5．6 MOS C-V Characteristics
5．7 Oxide Charge——A Modification to Vfband Vt
5．8 Poly-Si Gate Depletion——Effective Increase in Tox
5．9 Inversion and Accumulation Charge-Layer Th
and Quantum Mechanical Effect
5．1 0CCD Imager and CMOS Imager
5．1 1Chapter Summary
PRO
REFERENCES
GENERAL REFERENCES
6MOS Trans
6．1Introduction to the M
6．2Complementary MOS (CMOS) Techn
6．3Surface Mobilities and High-Mobility
6．4MOSFET Vt， Body Effect， and Steep Retrograde Doping
6．5QINVin M
6．6Basic MOSFETIV Model
6．7CMOS Inverter——A Circuit Example
6．8Velocity Saturation
6．9MOSFET IV Model with Velocity Saturation
6．10Parasitic Source-Drain Resistance
6．11 Extraction of the Series Resistance and the Effective Channel Length
6．12Velocity Overshoot and Source Velocity Limit
6．13Output Conductance
6．14High-Frequency Performance
6．15MOSFET Noises
6．16SRAM， DRAM， Nonvolatile (Flash) Memory Devices
6．17Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
7MOSFETs in ICs-Scaling， Leakage， and Other T
7．1Technology Scaling——For Cost， Speed， and Power Consumption
7．2Subthreshold Current——"Off" Is Not Totally"Off"
7．3 Vt Roll-Off——Short-Channel MOSFETs Leak
7．4Reducing Gate-Insulator Electrical Thickness and Tunneling Leakage
7．5How to Reduce Wdep
7．6Shallow Junction and Metal SourceDrain MOSFET
7．7Trade-Off Betweenon andoff and Design for Manufacturing
7．8Ultra-Thin-Body SOl and Multigate MOSFETs
7．9Output Conductance
7．10Device and Process Simulation
7．11MOSFET Compact Model for Circuit Simulation
7．12Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
8Bipolar Trans
8．1Introduction to the BJT
8．2Collector Current
8．3Base Current
8．4 Current Gain
8．5Base-Width Modulation by Collector Voltage
8．6Ebers-Moll Model
8．7Transit Time and Charge Storage
8．8Small-Signal Model
8．9Cutoff Frequency
8．10Charge Control Model
8．11Model for Large-Signal Circuit Simulation
8．12Chapter Summary
PROBLEMS
REFERENCES
GENERAL REFERENCES
Appendix Ⅰ
Derivation of the Density of States
Appendix Ⅱ
Derivation of the Fermi-Dirac Distribution
Appendix Ⅲ
Self-Consistencies of Minority Carrier As
Answers to Selected Problems
Index
集成电路中的现代半导体器件（英文版）是2012年由科学出版社出版,作者[美]Hu。
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